A series of polyimides were synthesis from bis(1,3-dioxo-1,3-dihydroisobenzofuran-5-carboxylic Acid) 1,4-Phenylene Ester (TAHQ) and di(eter amine)s by a standard two-step process with thermal imidization of the poly(amic acid)s precursors. These polyimides films with a low dielectric constant (<3.0 @ 10GHz) are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. These polymer film also exhibited good solubility and lower dielectric constant (<2.6@ 10GHz) and low loss (Dfâ?¦0.004) with easier process to form insulating film cam be used in flexible print circuit material. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Mesoporous materials offer the opportunity to fabricate scalable dielectric constant materials. We have been working on projects using porous silica materials as low-k dielectrics for electrical interconnections. Moreover, these insulating polymer film showed good adhesion with Cu foil, and high thermal stability ( T5>450 oC).
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