Structural Chemistry & Crystallography Communication

Epitaxial non-c axis superconducting Bi-2212 thin films targeting novel THz planar devices

Molecular organic chemical vapor deposition was employed
for the growth of 3D epitaxial
(117) Bi2Sr2CaCu2O8+d (Bi-2212) thin films on (110)
SrTiO3 and (110) LaAlO3 substrates.
Substrates were vicinal with off angles up to 20°. X-ray
diffraction j - y scans demonstrate that
films grown on a flat substrate are composed of twinned
grains, while the films on vicinal substrate
are twin-free. When growth of the film is performed at
two temperatures (growth starts at 550-600
°C and continues at 700-750 °C) a higher quality is obtained.
The twin-free film grown by the two-temperature
route has a zero-resistance critical temperature of 37 and
32 K when the measuring current is applied in-plane parallel
and perpendicular to [001] direction of the substrate.
The concept of novel planar THz devices is presented and
suitability of the twin-free non-c
axis thin films for their fabrication is discussed.

Author(s):

Kazuhiro Endo

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